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this is information on a product in full production. july 2012 doc id 018673 rev 5 1/12 12 STGW50H60DF 50 a, 600 v field stop trench gate igbt with ultrafast diode datasheet ? production data features high speed switching tight parameters distribution safe paralleling low thermal resistance 6 s short-circuit withstand time ultrafast soft recovery antiparallel diode lead free package applications photovoltaic inverters uninterruptible power supply welding power factor correction high switching frequency converters description using advanced proprietary trench gate and field stop structure, this igbt leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. furthermore, a slightly positive v ce(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STGW50H60DF gw50h60df to-247 tube www.st.com
electrical ratings STGW50H60DF 2/12 doc id 018673 rev 5 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 100 a i c continuous collector current at t c = 100 c 50 a i cp (1) 1. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 200 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge not repetitive forward current t p = 10 ms sinusoidal 120 a p tot total dissipation at t c = 25 c 360 w t sc short-circuit withstand time at v cc = 400 v, v ge = 15 v 6s t stg storage temperature range - 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.35 c/w r thjc thermal resistance junction-case diode 1.5 c/w r thja thermal resistance junction-ambient 50 c/w
STGW50H60DF electrical characteristics doc id 018673 rev 5 3/12 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 50 a 1.8 v v ge = 15 v, i c = 50 a t j = 125 c 2.0 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 6.0 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 7150 275 140 - pf pf pf q g total gate charge v cc = 400 v, i c = 50 a, v ge = 15 v -217-nc q ge gate-emitter charge - 61 - nc q gc gate-collector charge - 90 - nc table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v - 62 28 1800 - ns ns a/s t d(on) t r (di/dt) on tu r n - o n d e l ay t i m e current rise time turn-on current slope v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v t j = 125 c - 62 29 1680 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v - 34 178 40 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v t j = 125 c - 45 205 80 - ns ns ns
electrical characteristics STGW50H60DF 4/12 doc id 018673 rev 5 table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 20 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25 c and 125 c). 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v - 0.89 0.86 1.75 - mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v ce = 400 v, i c = 50 a, r g = 10 , v ge = 15 v t j = 125 c - 1.24 1.15 2.39 - mj mj mj table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t j = 125 c - 2 1.65 2.5 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/s - 55 110 3 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/s , t j =125 c - 140 400 5.5 - ns nc a
STGW50H60DF electrical characteristics doc id 018673 rev 5 5/12 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = -40 c) figure 3. output characteristics (t j = 25 c) figure 4. output characteristics (t j = 150 c) figure 5. transfer characteristics figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 0 20 40 60 80 100 120 140 160 180 200 01234 i c (a) v ce (v) 9v 11v 13v v ge = 20v v ge = 15v am11829v1 am11830v1 0 20 40 60 80 100 120 140 160 180 01234(v) i c (a) v ce 9v 11v 13v v ge = 15v v ge = 20v am11831v1 0 20 40 60 80 100 120 140 160 180 01234(v) i c (a) v ce 9 v 11 v 13 v v ge = 15 v v ge = 20 v am11832v1 0 20 40 60 80 100 120 140 160 180 6 7 8 9 10 11 12 i c (a) v ge (v) t j = -40c t j = 25c t j = 150c v ce = 10v am11833v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 v ce (v) t j (oc) i c = 100a i c = 50a i c = 25a v ge = 15v am11834v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 20 30 40 50 60 70 80 90 v ce (v) i c (a) t j = -40c t j = 25c t j = 150c v ge =15v
electrical characteristics STGW50H60DF 6/12 doc id 018673 rev 5 figure 8. normalized v ge(th) vs. junction temperature figure 9. gate charge vs. gate-emitter voltage figure 10. capacitance variations (f = 1 mhz, v ge = 0) figure 11. switching losses vs. collector current figure 12. switching losses vs. gate resistance figure 13. switching losses vs. temperature am11853v1 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 125 v ge(th) norm (v) t j (oc) i c = 1 ma am11836v1 0 2 4 6 8 10 12 14 16 050100150200 v ge (v) q g (nc) am11837v1 10 100 1000 10000 0.1 1 10 c (pf) v ce (v) c res c oes c ies am11838v1 0 500 1000 1500 2000 2500 3000 3500 20 40 60 80 e (j) i c (a) t j = 25c t j = 125c ---- v cc = 400 v, v ge = 15 v, r g = 10 e on e off am11839v1 0 500 1000 1500 2000 2500 3000 3500 4000 010203040 e (j) r g () v cc = 400v, v ge = 15v, i c = 50 a, t j = 125c e on e off am11840v1 800 900 1000 1100 1200 1300 1400 25 50 75 100 125 t j (c) v cc = 400v, v ge = 15v, i c = 50 a, r g = 10 e on e off
STGW50H60DF electrical characteristics doc id 018673 rev 5 7/12 figure 14. turn-off soa figure 15. short circuit time & current vs. v ge figure 16. diode forward current vs. forward voltage figure 17. diode forward current vs. junction temperature figure 18. maximum normalized z th junction to case (igbt) figure 19. maximum normalized z th junction to case (diode) am11841v1 0.01 0.1 1 10 100 0.1 1 10 100 i c (a) v ce (v) v ge = 15 v, r g = 10 t c = 150 c am11842v1 50 150 250 350 2.5 5 7.5 10 12.5 15 17.5 20 9 101112131415 i sc (a) t sc (s) v ge (v) v cc = 400v, t c = 25c t sc i sc am11843v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 15 20 25 30 35 40 45 50 55 v f (v) i f (a) t j = -40c t j = 25c t j = 150c am11844v1 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 v f (v) t j (oc) i f = 60a i f = 30a i f = 15a am11845v1 1e-02 1e-01 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 k t p (s) single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5 am11846v1 1.e-02 1.e-01 1.e+00 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 k t p (s) single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5
test circuits STGW50H60DF 8/12 doc id 018673 rev 5 3 test circuits figure 20. test circuit for inductive load switching figure 21. gate charge test circuit figure 22. switching waveform figure 23. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
STGW50H60DF package mechanical data doc id 018673 rev 5 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
package mechanical data STGW50H60DF 10/12 doc id 018673 rev 5 figure 24. to-247 drawing 0075 3 25_f
STGW50H60DF revision history doc id 018673 rev 5 11/12 5 revision history table 10. document revision history date revision changes 28-apr-2011 1 initial release. 26-jul-2011 2 added: t sc and t stg table 2 on page 2 . updated: ta bl e 4 , ta bl e 5 , table 6 on page 3 and table 7 on page 4 . 12-jan-2012 3 document status promoted from preliminary data to datasheet. 10-feb-2012 4 added: section 2.1: electrical characteristics (curves) . 26-jul-2012 5 modified: figure 8 on page 6 .
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